Low‐Density Injected Plasma in p‐Type Indium Antimonide
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1658337
Reference5 articles.
1. The Madistor-A Magnetically Controlled Semiconductor Plasma Device
2. Negative‐Resistance Current‐Voltage Characteristics of an Indium Antimonide p+−p−n+ Diode
3. Carrier Lifetime in Indium Antimonide
4. Recombination Centers in InSb
5. Cyclotron resonance in p-type InSb at millimetre wavelengths
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Negative resistances observed in InSb diodes reverse biased;Applied Physics Letters;1977-11-15
2. An investigation of the effect of a magnetic field on the forward characteristics of some silicon diodes at low temperatures;Journal of Physics D: Applied Physics;1975-01-17
3. On the behaviour of forward biased silicon diodes at low temperatures;Solid-State Electronics;1974-06
4. Oscillations of injected carriers in p-type indium antimonide;Physica Status Solidi (a);1972-10-16
5. Effect of magnetic field on current filament in gold‐doped silicon;Applied Physics Letters;1972-08-15
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