Resistivity reduction of low temperature grown p-Al0.09Ga0.91N by suppressing the incorporation of carbon impurity-Reference-Cited by-同舟云学术

Resistivity reduction of low temperature grown p-Al0.09Ga0.91N by suppressing the incorporation of carbon impurity

Published:2018-08 Issue:8 Volume:8 Page:085005
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Liang F.¹,Yang Jing¹,Zhao D. G.¹²,Jiang D. S.¹^ORCID,Liu Z. S.¹,Zhu J. J.¹,Chen P.¹,Liu S. T.¹^ORCID,Xing Y.¹,Zhang L. Q.³,Wang W. J.⁴,Li Mo⁴,Zhang Y. T.⁵,Du G. T.⁵

Affiliation:

1. State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China

2. University of Chinese Academy of Sciences, Beijing 100049, China

3. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China

4. Microsystem & Terahertz Research Center, Chinese Academy of Engineering Physics, Chengdu 610200, China

5. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130023, China

Funder

National key R&D Program of China

Science Challenge Project

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5046875

Reference30 articles.

1. Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes

2. GaN-based green laser diodes

3. Light output improvement of GaN-based light-emitting diodes grown on Si (111) by a via-thin-film structure

4. Comprehensive and fully self-consistent modeling of modern semiconductor lasers

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