Reactive ion etching of polycrystalline silicon using SiCl4
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104715
Reference10 articles.
1. Reactive ion etching of GaAs in a chlorine plasma
2. Reactive ion etching of GaAs using BCl3
3. Reactive ion etching of GaAs in CCl4/H2and CCl4/O2
4. Reactive ion etching of GaAs and InP using SiCl4
5. Reactive ion stream etching utilizing electron cyclotron resonance plasma
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3. Mass spectroscopic measuring of SiCln (n = 0–2) radicals in SiCl4 RF glow discharge plasma;Journal of Materials Science;2007-12
4. Effects of deposition parameters on SiCln (n=0–2) densities in SiCl4 glow discharge plasma;Vacuum;2007-09
5. Effects of hydrogen dilution on deposition process of nano-crystalline silicon film by SiCl4/H2plasma;Journal of Physics D: Applied Physics;2006-06-30
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