Structural and electron transport properties of single-crystalline In2O3 films compensated by Ni acceptors
Author:
Affiliation:
1. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, D–10117 Berlin, Germany
2. Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastraße 72, D–79108 Freiburg, Germany
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5006421
Reference46 articles.
1. Indium oxide—a transparent, wide-band gap semiconductor for (opto)electronic applications
2. Detection of NO2 down to ppb Levels Using Individual and Multiple In2O3 Nanowire Devices
3. The role of surface electron accumulation and bulk doping for gas-sensing explored with single-crystalline In2O3 thin films
4. Effect of nickel ions on sensitivity of In2O3 thin film sensors to NO2
5. A low temperature operating gas sensor with high response to NO2 based on ordered mesoporous Ni-doped In2O3
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1. The electrical conductivity of cubic (In1−x Ga x )2O3 films (x ≤ 0.18): native bulk point defects, Sn-doping, and the surface electron accumulation layer;Japanese Journal of Applied Physics;2022-03-16
2. Two-dimensional electron gas of the In2O3 surface: Enhanced thermopower, electrical transport properties, and reduction by adsorbates or compensating acceptor doping;Physical Review B;2020-08-03
3. Processing Strategies for High-Performance Schottky Contacts on n-Type Oxide Semiconductors: Insights from In2O3;ACS Applied Materials & Interfaces;2019-07-04
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