Improvement of memristive properties in CuO films with a seed Cu layer-Reference-Cited by-同舟云学术

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Improvement of memristive properties in CuO films with a seed Cu layer

Published:2019-02-11 Issue:6 Volume:114 Page:061602
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Cheng Tie-Dong¹²^ORCID,Zhang Hao²,Liu Nan²,Yu Peng-Fei²,Wu Gui-Tai²,Tang Xin-Gui¹

Affiliation:

1. School of Physics and Optoelectric Engineering, Guangdong University of Technology, Guangzhou, Guangdong 510006, Peoples Republic of China

2. School of Electrical Engineering and Automation, Jiangxi University of Science and Technology, Ganzhou, Jiangxi 341000, Peoples Republic of China

Funder

NSFC | National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5079876

Reference28 articles.

1. Nanoionics‐Enabled Memristive Devices: Strategies and Materials for Neuromorphic Applications

2. Resistance switching memories are memristors

3. Zinc Oxide Thin Films for Memristive Devices: A Review

4. Studies on resistive switching times in NiO thin films grown by pulsed laser deposition

5. Resistive switching properties of polycrystalline HfOxNyfilms by plasma-enhanced atomic layer deposition

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1. Light-Tunable Resistive Switching Properties of a BiFeO3/Ti3C2 Heterostructure Memristor;Journal of Electronic Materials;2023-04-01

2. Resistive switching characteristics of interfacial device based on Bi2Ti2O7 film;Surfaces and Interfaces;2023-04

3. Modulation of the NiO_x bandgap by controlling oxygen stoichiometry;Journal of Applied Physics;2022-11-07

4. Defects-curated bipolar resistive switching and magnetism in CuxO films;Applied Surface Science;2022-11

5. Ag@Cu with Cu–CuO interface prepared by air cold-plasma promoting the electrocatalytic reduction of CO2 to low-carbon alcohols;Vacuum;2022-02

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