1. A. Kinoshita, C. Tanaka, K. Uchida, and J. Koga, 2005 Symp. on VLSI Technol. Dig., 2005, p. 158.
2. W.Y Loh, P. Y. Hung, B. E. Coss, P. Kalra, I. Ok, G. Smith, C.Y. Kang, S.H. Lee, J. Oh, B. Sassman, P. Majhi, P. Kirsch, H-H. Tseng, and R. Jammy, 2009 Symp. on VLSI Technol. Dig., 2009, p. 100.
3. L. Hutin, M. Vinet, T. Poiroux, C. Le Royer, B. Previtali, C. Vizioz, D. Lafond, Y. Morand, M. Rivoire, F. Nemouchi, V. Carron, T. Billon, S. Deleonibus, and O. Faynot, Tech. Dig.Int. Electron Devices Meet., 2009, p. 45.
4. (111)-Faceted Metal Source and Drain for Aggressively Scaled Metal/High- $k$ MISFETs
5. W. Mizubayashi, S. Migita, Y. Morita, and H. Ota, 2011 Symp. on VLSI Technol. Dig., 2011, p. 88.