Temperature dependent surface photovoltage spectroscopy characterization of highly strained InGaAs/GaAs double quantum well structures grown by metal organic vapor phase epitaxy-Reference-Cited by-同舟云学术

Temperature dependent surface photovoltage spectroscopy characterization of highly strained InGaAs/GaAs double quantum well structures grown by metal organic vapor phase epitaxy

Published:2009-08-15 Issue:4 Volume:106 Page:043523
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Chan C. H.,Wu J. D.,Huang Y. S.,Su Y. K.,Tiong K. K.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3208053

Reference23 articles.

1. Highly strained InGaAs QW VCSEL with lasing wavelength at 1.22 [micro sign]m

2. Low-threshold, high-temperature operation of 1.2 [micro sign]m InGaAs vertical cavity lasers

3. MOVPE growth of highly strained InGaAs/GaAs quantum wells

4. MOVPE growth optimization for laser diodes with highly strained InGaAs MQWs

5. HigHighly strained InGaAs/GaAs quantum wells emitting beyond 1.2 µm

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