V5+ ionic displacement induced ferroelectric behavior in V-doped ZnO films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2748081
Reference17 articles.
1. Epitaxial ferroelectric Ba0.5Sr0.5TiO3 thin films for room-temperature tunable element applications
2. Ferroelectric Transition inPb1−xGexTe: Extended X-Ray-Absorption Fine-Structure Investigation of the Ge and Pb Sites
3. Ferroelectricity in zinc cadmium telluride
4. Ferroelectric Properties in Piezoelectric Semiconductor Zn1-xMxO (M=Li, Mg)
5. Effect of Li substitution on dielectric and ferroelectric properties of ZnO thin films grown by pulsed-laser ablation
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