Thermal stability of nitrogen in nitrided HfSiO2/SiO2/Si(001) ultrathin films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3021051
Reference23 articles.
1. Chemical analysis of HfO2∕Si (100) film systems exposed to NH3 thermal processing
2. Thin films and interfaces in microelectronics: composition and chemistry as function of depth
3. Depth-Resolved Composition and Chemistry of Ultra-Thin Films by Angle-Resolved X-Ray Photoelectron Spectroscopy
4. Atomic transport and chemical stability of nitrogen in ultrathin HfSiON gate dielectrics
5. Effect of N incorporation on boron penetration from p+ polycrystalline-Si through HfSixOy films
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