Reduced reverse gate leakage current for GaN HEMTs with 3 nm Al/40 nm SiN passivation layer-Reference-Cited by-同舟云学术

Reduced reverse gate leakage current for GaN HEMTs with 3 nm Al/40 nm SiN passivation layer

Published:2019-01-07 Issue:1 Volume:114 Page:013503
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhang Sheng¹²,Wei Ke²,Ma Xiao-Hua¹,Hou Bin¹^ORCID,Liu Guo-Guo²,Zhang Yi-chuan²,Wang Xin-Hua²,Zheng Ying-Kui²,Huang Sen²,Li Yan-Kui²,Lei Tian-Min¹,Liu Xin-Yu²

Affiliation:

1. School of Advanced Materials and Nanotechnology, Xidian University, Shaanxi, Xi'an 710071, People's Republic of China

2. High-Frequency High-Voltage Device and Integrated Circuits Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's Republic of China

Funder

natural fund

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5077050

Reference25 articles.

1. Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology

2. High-Voltage (600-V) Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs with AlN/SiNx Passivation

3. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs