Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrode
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4731746
Reference37 articles.
1. High dielectric constant oxides
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4. Atomic layer deposition of LaxZr1−xO2−δ (x=0.25) high-k dielectrics for advanced gate stacks
5. Germanium-induced stabilization of a very high-k zirconia phase in ZrO2/GeO2 gate stacks
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