In situ investigation of oxygen precipitation in Czochralski-silicon by high energy x-ray diffraction
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3177330
Reference11 articles.
1. Oxygen precipitation in silicon
2. A neutron backscattering study of lattice deformations in silicon due to SiO2precipitation
3. Insituneutron diffraction study of lattice deformation during oxygen precipitation in silicon
4. Annealed Czochralski grown silicon crystals: A new material for the monochromatisation of synchrotron radiation and X-rays above 60 keV
5. Experimental tests of the statistical dynamical theory
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Sample thickness effect of thermal vibration correction within X-ray dynamical theory for germanium-doped silicon;Journal of Applied Physics;2017-03-28
2. In situ observation of formation and growth of oxygen nano-precipitates in silicon with high energy X-rays from a laboratory source;Journal of Crystal Growth;2011-03
3. Thickness dependence of the integrated Bragg intensity for statistically disturbed silicon crystals;Applied Physics Letters;2011-01-24
4. X-ray in situ observation of oxygen precipitation in silicon confirmed with ex situ detection methods;physica status solidi (a);2010-12-07
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