Investigation of intrinsic channel characteristics of hydrogenated amorphous silicon thin-film transistors by gated-four-probe structure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121484
Reference6 articles.
1. The physics of amorphous-silicon thin-film transistors
2. Gated-four-probe a-Si:H TFT structure: a new technique to measure the intrinsic performance of a-Si:H TFT
3. Robust target recognition based on fractal analysis
4. Performance of thin hydrogenated amorphous silicon thin‐film transistors
5. A self‐consistent analysis of temperature‐dependent field‐effect measurements in hydrogenated amorphous silicon thin‐film transistors
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