Reflectance‐difference spectroscopy study of surface reactions in atomic layer epitaxy of GaAs using trimethylgallium and tertiarybutylarsine
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104916
Reference17 articles.
1. Molecular Layer Epitaxy
2. Use of tertiarybutylarsine in the fabrication of GaAs/AlGaAs quantum wells and quantum well lasers
3. Optical reflectance and electron diffraction studies of molecular-beam-epitaxy growth transients on GaAs(001)
4. Application of reflectance difference spectroscopy to molecular‐beam epitaxy growth of GaAs and AlAs
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