AlxGa1−xAs/GaAs quantum well structures grown by metalorganic molecular beam epitaxy using dimethylethylamine alane
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112199
Reference19 articles.
1. Effect of source chemistry and growth parameters on AlGaAs grown by metalorganic molecular beam epitaxy
2. Carbon incorporation in AlGaAs grown by CBE
3. New metalorganic gallium precursors for the growth of GaAs and AlGaAs by CBE
4. CBE growth of AlGaAs/GaAs heterostructures and their device applications
5. Growth of GaAs/AlGaAs HBTs by MOMBE (CBE)
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Atomistic pseudopotential calculations of thickness-fluctuation GaAs quantum dots;Physical Review B;2009-03-31
2. The use of aluminum and gallium hydrides in materials science;Coordination Chemistry Reviews;2000-09
3. Potential and prospects of CBE technology compared to MBE as production tool for microwave devices;Journal of Crystal Growth;1998-06
4. Chemical beam epitaxy growth of tensile-strained quantum well heterostructures for laser application;Journal of Crystal Growth;1997-05
5. Improvement of the crystallinity of superlattices grown on Si substrates by rapid thermal annealing;Thin Solid Films;1995-08
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