Bipolar resistive switching performance of the nonvolatile memory cells based on (AgI)0.2(Ag2MoO4)0.8 solid electrolyte films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3211293
Reference22 articles.
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2. Switching behavior of bulk, fast ion conducting, vitreous AgI‐Ag 2 O‐MoO 3 solids with inert electrode;Journal of the American Ceramic Society;2019-06-27
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4. Effect of top electrode material on resistive switching properties of WN based thin films for non volatile memory application;Journal of Alloys and Compounds;2017-12
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