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InAs QDs on (111)-faceted Si (001) hollow substrates with strong emission at 1300 nm and 1550 nm

  • Published:2018-07-30 Issue:5 Volume:113 Page:053107
  • ISSN:0003-6951
  • Container-title:Applied Physics Letters
  • language:en
  • Short-container-title:Appl. Phys. Lett.

Author:

Wei Wen-Qi12,Wang Jian-Huan13,Zhang Bin13,Zhang Jie-Yin13,Wang Hai-Ling13ORCID,Feng Qi1,Xu Hong-Xing2,Wang Ting1,Zhang Jian-Jun1

Affiliation:

1. Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

2. School of Physics and Technology, Wuhan University, Wuhan 430072, China

3. School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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1. From Challenges to Solutions, Heteroepitaxy of GaAs-Based Materials on Si for Si Photonics;Thin Films - Growth, Characterization and Electrochemical Applications;2024-01-17

2. Ultra‐Low Loss SiN Edge Coupler for III‐V/SiN Hybrid Integration;Laser & Photonics Reviews;2023-09-10

3. Monolithic Integration of III-V Quantum Dot Lasers and Silicon Waveguides on SOI Platforms;2023 Opto-Electronics and Communications Conference (OECC);2023-07-02

4. Tbps Data Transmission with Quantum Dot Frequency comb laser;2023 Opto-Electronics and Communications Conference (OECC);2023-07-02

5. Monolithic Quantum Dot Discrete Mode Laser on SOI;ACS Photonics;2023-05-25
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