InAs QDs on (111)-faceted Si (001) hollow substrates with strong emission at 1300 nm and 1550 nm-Reference-Cited by-同舟云学术

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InAs QDs on (111)-faceted Si (001) hollow substrates with strong emission at 1300 nm and 1550 nm

Published:2018-07-30 Issue:5 Volume:113 Page:053107
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wei Wen-Qi¹²,Wang Jian-Huan¹³,Zhang Bin¹³,Zhang Jie-Yin¹³,Wang Hai-Ling¹³^ORCID,Feng Qi¹,Xu Hong-Xing²,Wang Ting¹,Zhang Jian-Jun¹

Affiliation:

1. Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

2. School of Physics and Technology, Wuhan University, Wuhan 430072, China

3. School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5043169

Reference23 articles.

1. Energy-efficient communication

2. The commercialization of silicon photonics

3. Recent progress in lasers on silicon

4. High-output-power, single-wavelength silicon hybrid laser using precise flip-chip bonding technology

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