Direct and indirect excitation of Er3+ ions in Er: AIN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118951
Reference11 articles.
1. Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials
2. Photoluminescence of ion‐implanted GaN
3. 1.54‐μm photoluminescence from Er‐implanted GaN and AlN
4. Cathodoluminescence study of erbium and oxygen coimplanted gallium nitride thin films on sapphire substrates
5. Characterization Of Er-Doped III-V Nitride Epilayers Prepared by Mombe
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2. Current injection 154 µm light-emitting devices based on Er-doped GaN/AlGaN multiple quantum wells;Optical Materials Express;2016-10-10
3. Enhancement of 1.5 μm emission under 980 nm resonant excitation in Er and Yb co-doped GaN epilayers;Applied Physics Letters;2016-10-10
4. MOCVD growth of Er-doped III-N and optical-magnetic characterization;Rare Earth and Transition Metal Doping of Semiconductor Materials;2016
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