Highly oriented diamond (111) films synthesized by pulse bias-enhanced nucleation and epitaxial grain selection on a 3C-SiC/Si (111) substrate
Author:
Affiliation:
1. Department of Physical Electronics, Tokyo Institute of Technology, Ookayama, Meguro, Tokyo 152-8552, Japan
2. JST-CREST. Chiyoda, Tokyo 102-0076, Japan
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4975630
Reference37 articles.
1. Generation of diamond nuclei by electric field in plasma chemical vapor deposition
2. Oriented nucleation and growth of diamond films on β‐SiC and Si
3. Epitaxial growth of diamond thin films on cubic boron nitride {111} surfaces by dc plasma chemical vapor deposition
4. Growth of highly (111)-oriented, highly coalesced diamond films on platinum (111) surface: A possibility of heteroepitaxy
5. Oriented diamond films grown on nickel substrates
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