Molecular dynamics simulations for the prediction of thermal conductivity of bulk silicon and silicon nanowires: Influence of interatomic potentials and boundary conditions-Reference-Cited by-同舟云学术

Molecular dynamics simulations for the prediction of thermal conductivity of bulk silicon and silicon nanowires: Influence of interatomic potentials and boundary conditions

Published:2011-08 Issue:3 Volume:110 Page:034309
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Abs da Cruz Carolina,Termentzidis Konstantinos,Chantrenne Patrice,Kleber Xavier

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3615826

Reference47 articles.

1. “Higher-κ” dielectrics for advanced silicon microelectronic devices: A combinatorial research study

2. Strain and strain-release engineering at epitaxial SiGe islands on Si(001) for microelectronic applications

3. MEMS/microelectronics self-assembly based on analogy of Langmuir–Blodgett approach

4. A high-temperature MEMS heater using suspended silicon structures

5. Environment-dependent interatomic potential for bulk silicon

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