Diffuse x-ray scattering and transmission electron microscopy study of defects in antimony-implanted silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1666975
Reference31 articles.
1. Transient Phosphorus Diffusion Below the Amorphization Threshold
2. Implantation and transient B diffusion in Si: The source of the interstitials
3. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
4. Boron-enhanced diffusion of boron from ultralow-energy ion implantation
5. Boron-enhanced diffusion of boron: Physical mechanisms
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3. Loss of implanted heavy elements during annealing of ultra-shallow ion-implanted silicon: The complete picture;Applied Surface Science;2014-09
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