Excitonic luminescence from nonsymmetric heterovalent AlAs/GaAs/ZnSe quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1563055
Reference21 articles.
1. Injection and detection of a spin-polarized current in a light-emitting diode
2. Heavy-light hole mixing at zinc-blende (001) interfaces under normal incidence
3. Structural and optical properties of undoped and doped ZnSe/GaAs strained heterostructures
4. Transitivity of the band offsets in II–VI/III–V heterojunctions
5. Local interface composition and band discontinuities in heterovalent heterostructures
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1. Growth of II-VI/III-V heterovalent quantum structures;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2018-03
2. Excitons in single and double GaAs/AlGaAs/ZnSe/Zn(Cd)MnSe heterovalent quantum wells;Semiconductors;2011-02
3. III–V/II–VI heterovalent double quantum wells;physica status solidi (b);2006-03
4. Giant Zeeman Splitting of Excitons in a III–V Nonmagnetic Quantum Well Electronically Coupled With a II–VI Semimagnetic Quantum Well;Journal of Superconductivity;2005-07-09
5. Resonant spin-dependent electron coupling in a III-V/II-VI heterovalent double quantum well;Physical Review B;2005-05-11
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