An organic ferroelectric field effect transistor with poly(vinylidene fluoride-co-trifluoroethylene) nanostripes as gate dielectric-Reference-Cited by-同舟云学术

An organic ferroelectric field effect transistor with poly(vinylidene fluoride-co-trifluoroethylene) nanostripes as gate dielectric

Published:2014-09-15 Issue:11 Volume:105 Page:113113
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Cai Ronggang¹,Kassa Hailu G.¹,Marrani Alessio²,van Breemen Albert J. J. M.³,Gelinck Gerwin H.³,Nysten Bernard¹,Hu Zhijun⁴,Jonas Alain M.¹

Affiliation:

1. Bio & Soft Matter, Institute of Condensed Matter and Nanosciences, Université catholique de Louvain, Croix du Sud 1/L7.04.02, B1348 Louvain-la-Neuve, Belgium

2. Solvay Specialty Polymers Italy S.P.A., Research and Development Center, Viale Lombardia, No. 20, Bollate (MI) 20021, Italy

3. Holst Centre/TNO; High Tech Campus 31, Eindhoven, The Netherlands

4. Center for Soft Condensed Matter Physics and Interdisciplinary Research, Soochow University, Suzhou 215006, China

Funder

Louvain Foundation

European Commission (EC)

Federaal Wetenschapsbeleid

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference23 articles.

1. Nonvolatile memory element based on a ferroelectric polymer Langmuir–Blodgett film

2. A nonvolatile memory element based on an organic field-effect transistor

3. Electrical properties of metal-ferroelectric-insulator-semiconductor structures based on ferroelectric polyvinylidene fluoride copolymer film gate for nonvolatile random access memory application

4. High-performance solution-processed polymer ferroelectric field-effect transistors

5. Low-voltage polymer field-effect transistors for nonvolatile memories

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