Mechanism for improvement of n-channel metal-oxide-semiconductor transistors by tensile stress
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3447843
Reference57 articles.
1. Physics of Hole Transport in Strained Silicon MOSFET Inversion Layers
2. Fabrication and analysis of deep submicron strained-Si n-MOSFET's
3. Influence of crystallographic orientation on local strains in silicon: A combined high-resolution X-ray diffraction and finite element modelling investigation
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