First principles study of Ge∕Si exchange mechanisms at the Si(001) surface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2926683
Reference26 articles.
1. Si/Ge nanostructures
2. Spontaneous ordering of nanostructures on crystal surfaces
3. Ge profile from the growth of SiGe buried layers by molecular beam epitaxy
4. Origin of Apparent Critical Thickness for Island Formation in Heteroepitaxy
5. Coarsening, Mixing, and Motion: The Complex Evolution of Epitaxial Islands
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3. Concurrent Characterization of Surface Diffusion and Intermixing of Ge on Si: A Classical Molecular Dynamics Study;Advanced Theory and Simulations;2023-03-16
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