Oscillator strengths, quantum efficiencies, and laser cross sections of Yb3+and Er3+in III‐V compounds
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.344028
Reference20 articles.
1. 1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon
2. Rare earth ions in LPE III-V semiconductors
3. Behaviour of erbium implanted in InP
4. Erbium-doped GaAs light-emitting diode at 1.54 μm
5. Observation of enhanced single longitudinal mode operation in 1.5‐μm GaInAsP erbium‐doped semiconductor injection lasers
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