Pd/InAlN Schottky diode with low reverse current by sulfide treatment
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3659477
Reference22 articles.
1. Power electronics on InAlN/(In)GaN: Prospect for a record performance
2. Current status of AlInN layers lattice-matched to GaN for photonics and electronics
3. AlInN-based ultraviolet photodiode grown by metal organic chemical vapor deposition
4. Improved performance of InAlN-based Schottky solar-blind photodiodes
5. High-sheet-charge–carrier-density AlInN∕GaN field-effect transistors on Si(111)
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1. Non-thermal alloyed ohmic contact process of GaN-based HEMTs by pulsed laser annealing;Semiconductor Science and Technology;2016-03-15
2. Annealing Pressure and Ambient Dependent RuOxSchottky Contacts on InAlN/AlN/GaN-on-Si(111) Heterostructure;ECS Journal of Solid State Science and Technology;2015-11-21
3. Effects of various surface treatments on gate leakage, subthreshold slope, and current collapse in AlGaN/GaN high-electron-mobility transistors;Japanese Journal of Applied Physics;2014-01-01
4. Enhanced Breakdown Voltage With High Johnson's Figure-of-Merit in 0.3-$\mu{\rm m}$ T-gate AlGaN/GaN HEMTs on Silicon by $({\rm NH}_{4})_{2}{\rm S}_{x}$ Treatment;IEEE Electron Device Letters;2013-11
5. Electrical Characteristics of Ti/Al Contacts on AlInN:Mg/GaN Heterostructures;Japanese Journal of Applied Physics;2013-10-01
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