III‐V heterostructure interfaces by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336648
Reference15 articles.
1. Metalorganic Chemical Vapor Deposition
2. Abrupt Ga1−xAlxAs‐GaAs quantum‐well heterostructures grown by metalorganic chemical vapor deposition
3. MOVPE Growth of Ga1-xAlxAs-GaAs Quantum Well Heterostructures
4. Abrupt OMVPE grown GaAs/GaAlAs heterojunctions
5. Growth and characterization of high-quality MOCVD AlGaAs/GaAs single quantum wells
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1. Metalorganic chemical vapor deposition for optoelectronic devices;Proceedings of the IEEE;1997
2. Atomic-scale composition fluctuations in III-V semiconductor alloys;Physical Review B;1993-06-15
3. Terracing and step bunching in interfaces of molecular beam epitaxy‐grown (Al)GaAs multilayers;Applied Physics Letters;1993-04-26
4. STRAINED LAYER QUANTUM WELL HETEROSTRUCTURE LASERS;Quantum Well Lasers;1993
5. Epitaxial Interfaces of III-V Heterostructures: Atomic Resolution, Composition Fluctuations and Doping;Semiconductor Interfaces at the Sub-Nanometer Scale;1993
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