Nitric acid oxidation of Si to form ultrathin silicon dioxide layers with a low leakage current density
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1621720
Reference39 articles.
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5. Kinetics of the silicon dioxide growth process in afterglows of microwave‐induced plasmas
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