Interfacial reactions and resistive switching behaviors of metal/NiO/metal structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3072800
Reference14 articles.
1. Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory
2. Voltage polarity dependent low-power and high-speed resistance switching in CoO resistance random access memory with Ta electrode
3. Random Circuit Breaker Network Model for Unipolar Resistance Switching
4. Temperature dependence of high- and low-resistance bistable states in polycrystalline NiO films
5. Effects of metal electrodes on the resistive memory switching property of NiO thin films
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1. Interpretations for coexistence of unipolar and bipolar resistive switching behaviors in Pt/NiO/ITO structure;Japanese Journal of Applied Physics;2019-05-28
2. Mechanistic Analysis of Oxygen Vacancy-Driven Conductive Filament Formation in Resistive Random Access Memory Metal/NiO/Metal Structures;ACS Applied Materials & Interfaces;2018-02-28
3. Effect of oxygen deficiency on electronic properties and local structure of amorphous tantalum oxide thin films;Materials Research Bulletin;2016-10
4. STUDIES ON STRUCTURAL AND RESISTIVE SWITCHING PROPERTIES OF Al/ZnO/Al STRUCTURED RESISTIVE RANDOM ACCESS MEMORY;Surface Review and Letters;2016-08-15
5. Structure and optical properties of polycrystalline NiO films and its resistive switching behavior in Au/NiO/Pt structures;Physica B: Condensed Matter;2015-12
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