Effect of impurities from deposition precursors on the electronic properties of Si/SiO<sub>2</sub> interfaces-Reference-Cited by-同舟云学术

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Effect of impurities from deposition precursors on the electronic properties of Si/SiO₂ interfaces

Published:2022-02-07 Issue:5 Volume:131 Page:055306
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Li Hu¹^ORCID,Inagaki Kouji²^ORCID,Morikawa Yoshitada²³^ORCID

Affiliation:

1. Simulation Technology Development Department, Tokyo Electron Technology Solutions Ltd., 650 Mitsuzawa, Hosaka-cho, Nirasaki, Yamanashi 407-0192, Japan

2. Department of Precision Engineering, Graduate School of Engineering, Osaka University, 2-1, Yamada-oka, Suita, Osaka 565-0871, Japan

3. Research Center for Precision Engineering, Graduate School of Engineering, Osaka University, 2-1, Yamada-oka, Suita, Osaka 565-0871, Japan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0072966

Reference30 articles.

1. A reliable approach to charge-pumping measurements in MOS transistors

2. Evaluation of Q/sub bd/ for electrons tunneling from the Si/SiO/sub 2/ interface compared to electron tunneling from the poly-Si/SiO/sub 2/ interface

3. Single-wafer polysilicon engineering for the improvement of over erase in a 0.18-μm floating-gate flash memory

4. Evaluation of Thermal Annealing Before and After Formation of Gate Insulator Films by Extracting Trap Densities for SPC Poly-Si TFTs

5. High dielectric constant oxides

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