Band parameters of GaAs, InAs, InP, and InSb in the 40-band k⋅p model
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3295900
Reference40 articles.
1. Motion of Electrons and Holes in Perturbed Periodic Fields
2. Energy-band structure of GaAs and Si: Asps*k⋅pmethod
3. Band structures of Ge and InAs: A 20 k.p model
4. Energy-band structure in strained silicon: A 20-band k⋅p and Bir–Pikus Hamiltonian model
5. Band structures of GaAs, InAs, and Ge: A 24-k.p model
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