Growth and rapid thermal annealing of AlGaAs/InGaAs pseudomorphic modulation‐doped structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99849
Reference18 articles.
1. Microwave performance of a quarter-micrometer gate low-noise pseudomorphic InGaAs/AlGaAs modulation-doped field effect transistor
2. A high-current pseudomorphic AlGaAs/InGaAs double quantum-well MODFET
3. Charge control, DC, and RF performance of a 0.35- mu m pseudomorphic AlGaAs/InGaAs modulation-doped field-effect transistor
4. IIA-5 Pulse-doped AlGaAs/InGaAs pseudomorphic MODFET's
5. Photoconductivity effects in extremely high mobility modulation‐doped (Al,Ga)As/GaAs heterostructures
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1. Comparison of the thermal interdiffusion phenomena in InGaAs/GaAs and InGaAs/AlGaAs strained heterostructures;Surfaces and Interfaces;2022-04
2. Hydrogen passivation of nonradiative defects in InGaAs/AlxGa1−xAs quantum wells;Journal of Applied Physics;1993-01-15
3. Molecular dynamics of nanoscale layered structures;Nanostructured Materials;1993-01
4. The Effect of Rapid Thermal Annealing on the Electrical and Material Characteristics of Planar Doped and Uniformly Doped GaAs/AiGaAs/InGaAs Pseudomorphic HEMT Structures;MRS Proceedings;1991
5. Photoluminescence and electroreflectance studies of modulation-doped pseudomorphic AlGaAs/InGaAs/GaAs quantum wells;Journal of Electronic Materials;1990-03
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