Plasma parameter estimation from rf impedance measurements in a dry etching system
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93948
Reference10 articles.
1. rf discharge plasma conditions in a plasma processing apparatus
2. Measurement of plasma discharge characteristics for sputtering applications
3. A kinetic study of the plasma‐etching process. II. Probe measurements of electron properties in an rf plasma‐etching reactor
4. Pressure dependence of electron temperature using rf‐floated electrostatic probes in rf plasmas
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