Metal insulator semiconductor solar cell devices based on a Cu2O substrate utilizing h-BN as an insulating and passivating layer-Reference-Cited by-同舟云学术

Metal insulator semiconductor solar cell devices based on a Cu2O substrate utilizing h-BN as an insulating and passivating layer

Published:2015-03-09 Issue:10 Volume:106 Page:103904
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ergen Onur¹²³^ORCID,Gibb Ashley¹²³,Vazquez-Mena Oscar¹²³,Regan William Raymond¹²^ORCID,Zettl Alex¹²³

Affiliation:

1. Department of Physics, University of California at Berkeley, Berkeley, California 94720, USA

2. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA

3. Kavli Energy Nanosciences Institute at the University of California, Berkeley, and the Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA

Funder

National Science Foundation (NSF)

Office of Naval Research (ONR)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4914181

Reference29 articles.

1. Explanation for low‐efficiency Cu2O Schottky‐barrier solar cells

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3. E. Y. Wang , D. Trivich , R. J. Komp , I.F. Huang , and D. J. Brinker , in 14th Photovoltaic Specialists Conference (1980), Vol. 1, pp. 458–461.

4. Preparation, characteristics and photovoltaic properties of cuprous oxide—a review

5. Heterojunction solar cell with 2% efficiency based on a Cu2O substrate

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