Enhanced elimination of implantation damage upon exceeding the solid solubility
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339126
Reference13 articles.
1. Role of Implant Energy on Defect Structures for Phosphorus Implanted Silicon
2. Flash – lamp annealing of phosphorus and antimony implanted silicon
3. Diffusion Modeling of the Redistribution of Ion Implanted Impurities
4. A review of rapid thermal annealing (RTA) of B, BF 2 and As ions implanted into silicon
5. Effects of phosphorus diffusion on growth and shrinkage of oxidation‐induced stacking faults
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1. Dislocation dynamics simulations with climb: kinetics of dislocation loop coarsening controlled by bulk diffusion;Philosophical Magazine;2011-08-11
2. Defects in Ultra-Shallow Junctions;Defects in Microelectronic Materials and Devices;2008-11-19
3. Energy Dependence of Radiation Damage in Sb-Implanted Si(100);Journal of The Electrochemical Society;2005
4. Study on End-of-Range Defects Induced by Sb Implantation;MRS Proceedings;2003
5. Triple crystal diffractometry, x-ray standing wave, and transmission electron microscopy investigation of shallow BF[sub 2] implantation in Si;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2002
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