Carrier and photon dynamics in a topological insulator Bi2Te3/GaN type II staggered heterostructure-Reference-Cited by-同舟云学术

Carrier and photon dynamics in a topological insulator Bi2Te3/GaN type II staggered heterostructure

Published:2015-11-09 Issue:19 Volume:107 Page:192105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chaturvedi P.¹,Chouksey S.¹,Banerjee D.¹^ORCID,Ganguly S.¹,Saha D.¹^ORCID

Affiliation:

1. Applied Quantum Mechanics Laboratory, Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai 400076, India

Funder

ISRO-IITB space technology cell

Department of Science and Technology, Ministry of Science and Technology (DST)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4935554

Reference23 articles.

1. Electrically injected ultra-low threshold room temperature InGaN/GaN-based lateral triangular nanowire laser

2. AlGaN devices and growth of device structures

3. Visible InGaN/GaN Quantum-Dot Materials and Devices

4. AlGaN/GaN high electron mobility transistors with InGaN back-barriers

5. AlGaN/GaN heterojunction bipolar transistors grown by metal organic chemical vapour deposition

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