Bias dependent dual band response from InAs∕Ga(In)Sb type II strain layer superlattice detectors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2824819
Reference11 articles.
1. InAs/GaInSb superlattices as a promising material system for third generation infrared detectors
2. Quantum dots-in-a-well infrared photodetectors
3. Type-II InAs/GaSb strain layer superlattice detectors for higher operating temperatures
4. Midwave infrared type-II InAs∕GaSb superlattice detectors with mixed interfaces
5. Uncooled operation of type-II InAs∕GaSb superlattice photodiodes in the midwavelength infrared range
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