Metal-insulator-metal capacitor with high capacitance density and low leakage current using ZrTiO4 film
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3222895
Reference12 articles.
1. A capacitorless double-gate DRAM cell
2. A high-density MIM capacitor (13 fF/μm/sup 2/) using ALD HfO2 dielectrics
3. Atomic layer deposition of ZrO2 on W for metal–insulator–metal capacitor application
4. High capacitance density metal-insulator-metal structure based on Al2O3–HfTiO nanolaminate stacks
5. High density metal-insulator-metal capacitor based on ZrO2∕Al2O3∕ZrO2 laminate dielectric
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3. Improvement of Voltage Linearity and Leakage Current of MIM Capacitors With Atomic Layer Deposited Ti-Doped ZrO2 Insulators;IEEE Transactions on Electron Devices;2023-06
4. Voltage linearity modulation and polarity dependent conduction in metal-insulator-metal capacitors with atomic-layer-deposited Al2O3/ZrO2/SiO2 nano-stacks;Journal of Applied Physics;2015-07-07
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