Ultrahigh mobility two‐dimensional electron gas in AlxGa1−xAs/GaAs heterostructures by organometallic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110614
Reference13 articles.
1. Impurity trapping, interface structure, and luminescence of GaAs quantum wells grown by molecular beam epitaxy
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1. GaAs/AlGaAs Nanowire Heterostructures Studied by Scanning Tunneling Microscopy;Nano Letters;2007-08-28
2. Devices;Organometallic Vapor-Phase Epitaxy;1999
3. Monolithic integration of a 94 GHz AlGaAs/GaAs 2-DEG mixer on quartz substrate by epitaxial lift-off;IEEE Transactions on Electron Devices;1997
4. 2×106 cm2/V s electron mobility by metalorganic chemical vapor deposition with tertiarybutylarsine;Applied Physics Letters;1996-01-08
5. High quality single and double two‐dimensional electron gases grown by metalorganic vapor phase epitaxy;Applied Physics Letters;1995-09-25
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