Analysis of formation of hafnium silicide on silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1654565
Reference9 articles.
1. Metallurgical properties and electrical characteristics of palladium silicide-silicon contacts
2. Growth Kinetics Observed in the Formation of Metal Silicides on Silicon
3. LOW‐TEMPERATURE MIGRATION OF SILICON IN THIN LAYERS OF GOLD AND PLATINUM
4. Solid‐Solid Reactions in Pt–Si Systems
5. Hafnium‐Silicon Schottky Barriers: Large Barrier Height on p‐Type Silicon and Ohmic Behavior on n‐Type Silicon
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3. Precise chemical state analyses of ultrathin hafnium films deposited on clean Si(111)-7 × 7 surface using high-resolution core-level photoelectron spectroscopy;Surface Science;2020-11
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