Intrinsic device-to-device variation in graphene field-effect transistors on a Si/SiO2 substrate as a platform for discriminative gas sensing-Reference-Cited by-同舟云学术

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Intrinsic device-to-device variation in graphene field-effect transistors on a Si/SiO2 substrate as a platform for discriminative gas sensing

Published:2014-01-06 Issue:1 Volume:104 Page:013114
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lipatov Alexey,Varezhnikov Alexey,Augustin Martin,Bruns Michael,Sommer Martin,Sysoev Victor,Kolmakov Andrei,Sinitskii Alexander

Funder

NSF

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4861183

Reference45 articles.

1. The rise of graphene

2. A roadmap for graphene

3. 100-GHz Transistors from Wafer-Scale Epitaxial Graphene

4. Electric Field Effect in Atomically Thin Carbon Films

5. Ultrathin Epitaxial Graphite: 2D Electron Gas Properties and a Route toward Graphene-based Nanoelectronics

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