Deposition of dielectric films on silicon using a fore-vacuum plasma electron source
Author:
Affiliation:
1. Tomsk State University of Control Systems and Radioelectronics, 40 Lenin Ave., Tomsk 634050, Russia
2. Institute of High Current Electronics SB RAS, 2/3, Akademichesky Ave., Tomsk 634055, Russia
Funder
Russian Foundation for Basic Research (RFBR)
Ministry of Education and Science of the Russian Federation
Publisher
AIP Publishing
Subject
Instrumentation
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4953112
Reference21 articles.
1. Ion‐assisted deposition of mixed TiO2‐SiO2films
2. Hybrid gas-metal co-implantation with a modified vacuum arc ion source
3. A generator of gas-metal plasma based on an electron-injection discharge
4. Evolution of the plasma composition of a high power impulse magnetron sputtering system studied with a time-of-flight spectrometer
5. V. S. Fomenko, Emission Properties of Materials (Naukova Dumka, Kiev, 1981), p. 339 (in Russian).
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