Influence of annealing on carrier dynamics in As ion-implanted epitaxially lifted-off GaAs layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126017
Reference11 articles.
1. Subpicosecond carrier lifetime in GaAs grown by molecular beam epitaxy at low temperatures
2. Picosecond carrier lifetime in GaAs implanted with high doses of As ions: An alternative material to low‐temperature GaAs for optoelectronic applications
3. Subpicosecond carrier lifetimes in arsenic‐ion‐implanted GaAs
4. Ion-implanted GaAs for subpicosecond optoelectronic applications
5. High resistivity and picosecond carrier lifetime of GaAs implanted with MeV Ga ions at high fluences
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