Interface charge engineering in AlTiO/AlGaN/GaN metal–insulator–semiconductor devices
Author:
Affiliation:
1. Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5141399
Reference46 articles.
1. Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric
2. Investigations of HfO2∕AlGaN∕GaN metal-oxide-semiconductor high electron mobility transistors
3. AlGaN/GaN MIS-HEMTs with HfO2 gate insulator
4. AlGaN-GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors With Very High- $k$ Oxynitride $\hbox{TaO}_{x} \hbox{N}_{y}$ Gate Dielectric
5. Surface Passivation of AlGaN/GaN HFETs Using AlN Layer Deposited by Reactive Magnetron Sputtering
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