Analog high resistance bilayer RRAM device for hardware acceleration of neuromorphic computation-Reference-Cited by-同舟云学术

Analog high resistance bilayer RRAM device for hardware acceleration of neuromorphic computation

Published:2018-11-28 Issue:20 Volume:124 Page:202101
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Jacobs-Gedrim R. B.¹^ORCID,Agarwal S.¹^ORCID,Goeke R. S.¹,Smith C.¹,Finnegan P. S.¹,Niroula J.¹,Hughart D. R.¹,Kotula P. G.¹^ORCID,James C. D.¹,Marinella M. J.¹

Affiliation:

1. Sandia National Laboratories, 1515 Eubank Blvd SE, Albuquerque, New Mexico 87158-1084, USA

Funder

DOE, Advanced Manufacturing Office

Sandia National Laboratories

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5042432

Reference38 articles.

1. Deep learning

2. Power challenges may end the multicore era

3. M. Hu, J. P. Strachan, Z. Li, E. M. Grafals, N. Davila, C. Graveset al. “Dot-product engine for neuromorphic computing: Programming 1T1M crossbar to accelerate matrix-vector multiplication,” in2016 53nd ACM/EDAC/IEEE Design Automation Conference (DAC)(ACM, 2016), pp. 1–6.

4. Multiscale Co-Design Analysis of Energy, Latency, Area, and Accuracy of a ReRAM Analog Neural Training Accelerator

5. Circuit-Level Benchmarking of Access Devices for Resistive Nonvolatile Memory Arrays

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