Raman scattering study of folded acoustic phonons in GaAs/InxGa1−xAs strained‐layer superlattices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98441
Reference12 articles.
1. Optical studies of InxGa1−xAs‐GaAs strained multiquantum well structures
2. Growth conditions and characterization of InGaAs/GaAs strained layers superlattices
3. Photoluminescence of InxGa1-xAs-GaAs strained-layer superlattices
4. Doping and transport studies in InxGa1−xAs/GaAs strained-layer superlattices
5. Defects in epitaxial multilayers
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2. Behaviors of AlxGa1−xN (0.5⩽x⩽1.0)/GaN short period strained-layer superlattices on the threading dislocation density reduction in GaN films;Journal of Crystal Growth;2004-01
3. Influence of AlN/GaN strained multi-layers on the threading dislocations in GaN films grown by alternate supply of metalorganics and NH3;Materials Science and Engineering: B;2002-06
4. Growth and characterization of strained GaP films and strainedbarrier GaP/GaAs/GaP quantum wells on GaAs substrates;Materials Chemistry and Physics;1994-06
5. Magnetron sputter epitaxy and characterization of InSb/In1−xAlxSb strained layer superlattices;Journal of Crystal Growth;1994-04
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