Low‐threshold operation of a GaAs single quantum well mushroom structure surface‐emitting laser
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105089
Reference10 articles.
1. Room‐temperature continuous wave lasing characteristics of a GaAs vertical cavity surface‐emitting laser
2. Buried Heterostructure GaAs/GaAlAs Distributed Bragg Reflector Surface Emitting Laser with Very Low Threshold (5.2 mA) under Room Temperature CW Conditions
3. High‐power vertical‐cavity surface‐emitting AlGaAs/GaAs diode lasers
4. Low-threshold electrically pumped vertical-cavity surface-emitting microlasers
5. Room‐temperature continuous‐wave vertical‐cavity surface‐emitting GaAs injection lasers
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1. Vertical-cavity surface-emitting laser with a thin metal mirror fabricated by double implantation using a tungsten wire mask;Semiconductor Science and Technology;1996-11-01
2. Accurate Measurement of Layer Thickness Using Optical Reflective Spectra of Bragg Mirrors Grown by Molecular Beam Epitaxy;Japanese Journal of Applied Physics;1993-10-15
3. Enhanced performance of offset-gain high-barrier vertical-cavity surface-emitting lasers;IEEE Journal of Quantum Electronics;1993-06
4. Monolithic integration of a vertical cavity surface emitting laser and a metal semiconductor field effect transistor;Applied Physics Letters;1993-02-08
5. Optoelectronic semiconductor devices;Perspectives for Parallel Optical Interconnects;1993
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