Ion beam and temperature annealing during high dose implants
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96240
Reference8 articles.
1. Disorder produced by high‐dose implantation in Si
2. Ion beam induced epitaxial crystallisation of silicon
3. Ion-beam induced annealing of radiation damage in silicon on sapphire
4. Mechanism for dynamic annealing during high flux ion irradiation in Si
5. Regrowth Behavior of Three Different Damage Structures in P+ Implanted and Subsequently Laser Annealed Si
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1. Impact of fluence-rate related effects on the sputtering of silicon at elevated target temperatures;Journal of Applied Physics;2009-02-15
2. Amorphization/recrystallization of buried amorphous silicon layer induced by oxygen ion implantation;Journal of Applied Physics;2004-02
3. Range profiles in self-ion-implanted crystalline Si;Physical Review B;1995-12-01
4. Ion-beam-induced epitaxial crystallization and amorphization in silicon;Materials Science Reports;1990-12
5. Characterization of defects produced during self‐annealing implantation of As in silicon;Journal of Applied Physics;1990-09-15
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