Charge transport mechanism in SiNx-based memristor-Reference-Cited by-同舟云学术

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Charge transport mechanism in SiNx-based memristor

Published:2019-12-16 Issue:25 Volume:115 Page:253502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Gismatulin A. A.¹^ORCID,Gritsenko V. A.¹²³^ORCID,Yen T.-J.⁴^ORCID,Chin A.⁴^ORCID

Affiliation:

1. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Ave., 630090 Novosibirsk, Russia

2. Novosibirsk State University, 2 Pirogov Str., 630090 Novosibirsk, Russia

3. Novosibirsk State Technical University, 20 Marx ave., 630073 Novosibirsk, Russia

4. Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan

Funder

Russian Foundation for Basic Research

Ministry of Science and Technology, Taiwan

Russian Science Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5127039

Reference34 articles.

1. Memristive devices and systems

2. Memristive switching mechanism for metal/oxide/metal nanodevices

3. The future of electronics based on memristive systems

4. Resistance Controllability of $\hbox{Ta}_{2} \hbox{O}_{5}/\hbox{TiO}_{2}$ Stack ReRAM for Low-Voltage and Multilevel Operation

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1. Recent advances in halide perovskite memristors: From materials to applications;Frontiers of Physics;2023-12-11

2. Effect of Rapid Thermal Annealing on Si-Based Dielectric Films Grown by ICP-CVD;ACS Omega;2023-08-08

3. High-Accuracy Neural Network Interatomic Potential for Silicon Nitride;Nanomaterials;2023-04-13

4. Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing;Discover Nano;2023-03-09

5. An Overview of Complex Instability Behaviors Induced by Nonlinearity of Power Electronic Systems with Memristive Load;Energies;2023-03-07

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